Referring to FIG. 2, the semiconductor device package 200 may include the first electrode unit 210, including a first region 210a where the light emitting device 100 may be provided, and the second electrode unit 220 electrically separated from the first electrode unit 210 and provided on the substrate 201. The first electrode unit 210 and the second electrode unit 220 may each be formed of a single layer or a multilayer including one or more of titanium (Ti), copper (Cu), nickel (Ni), gold (Au), chromium (Cr), tantalum (Ta), platinum (Pt), tin (Sn), silver (Ag), and phosphorus (P). For example, silver (Ag) or aluminum (Al) may be provided on a surface of each of the first electrode unit 210 and the second electrode unit 220, and thus, a reflection efficiency of incident light may be enhanced, thereby increasing light efficiency. The first electrode unit 210 and the second electrode unit 220 may each include a metal layer, and thus, may prevent corrosion caused by water, thereby enhancing electrical reliability.
