Since the drawings in FIGS. 1-7 are intended for illustrative purpose, the elements in the drawings are not necessarily drawn to scale. For example, some of the elements may be enlarged or exaggerated for clarity purpose.

This invention relates generally to an edge emitting laser and a method of manufacturing the edge emitting laser. Specifically, the present invention relates to a laterally grown edge emitting laser and a method of manufacturing the same. More specifically, the edge emitting laser is formed by laterally growing III-V semiconductors on a sidewall of a semiconductor structure. A metal-oxide-semiconductor field-effect transistor (MOSFET) may be grown on a sidewall of a semiconductor structure, for example, on a sidewall of silicon. Exemplary embodiments of the present invention provide that an edge emitting laser may be grown on a sidewall of a semiconductor structure so that it can be integrated with the MOSFET, and also provide a method of forming the edge emitting laser by laterally growing III-V semiconductors on the sidewall of the semiconductor structure.

It will be understood that when an element such as a layer, region or substrate is referred to as being “on” or “over” another element, it can be directly on or over the other element or intervening elements may also be present. In contrast, when an element is referred to as being “directly on” or “directly over” another element, there are no intervening elements present. As used herein, the singular forms “a”, “an” and “the” are intended to include the plural forms as well, unless the context clearly indicates otherwise.