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Laterally grown edge emitting laser

專利號(hào)
US10096975B1
公開日期
2018-10-09
申請(qǐng)人
INTERNATIONAL BUSINESS MACHINES CORPORATION（US NY Armonk）
發(fā)明人
Effendi Leobandung; Ning Li
IPC分類
H01S5/343; H01S5/30; H01S5/02
技術(shù)領(lǐng)域
layer,iii,doped,cladding,optical,dielectric,may,substrate,structure,silicon
地域： NY NY Armonk

摘要

A laterally grown edge emitting laser is provided. A semiconductor structure is disposed on a substrate. A first, a second and a third III-V optical layers are sequentially and laterally grown on and from a sidewall of the semiconductor structure. A cladding semiconductor layer is disposed next to the third III-V optical layer and electrically connected to the III-V optical layer. Then, a first contact structure and a second contact structure is disposed on and electrically connected to the semiconductor structure and the cladding semiconductor layer, respectively. In the edge emitting laser, each of the first, second and third III-V optical layers may independently include a III-V semiconductor including at least one of group III elements of boron (B), gallium (Ga), aluminum (Al) and indium (In), and at least one of group V elements of nitrogen (N), phosphorus (P), arsenic (As), antimony (Sb) and bismuth (Bi). The laterally grown edge emitting laser may be integrated with a metal-oxide-semiconductor field-effect transistor (MOSFET). A method for manufacturing the laterally grown edge emitting laser is also provided.

說明書

The first dielectric layer 401 may be disposed on the substrate 100 to cover the substrate 100. The first dielectric layer 401 may function as an insulating layer to isolate the substrate 100, especially when it is a semiconductor substrate or a conductor substrate, from the laser components thereabove. The thickness of the first dielectric layer 401 may be in a range from about 5 nm to about 200 nm, for example, may be in a range from about 50 nm to about 100 nm. The first dielectric layer 401 may include tetraethyl orthosilicate (TEOS), silicon nitride (Si3N4), silicon oxide (SiO2), silicon oxynitride (SiON), nanoporous silica, hydrogensilsesquioxanes (HSQ), Teflon-AF (polytetrafluorethylene or PTFE), silicon oxyfluoride (FSG), carbon doped SiO2 (SiCO), hydrogenated silicon oxycarbide (SiCOH), or other low k dielectric materials. The preferable material for the first dielectric layer 401 is SiO2.

權(quán)利要求

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