The semiconductor structure 301 may be disposed on the substrate 100 for lateral growth of the edge emitting laser and for electrode, for example, cathode, connection at a first direction, X direction, extending in a second direction, Y direction, and may protrude from the substrate 100 through the first dielectric layer 401 in a third direction, Z direction, perpendicular to the first and second directions. The semiconductor structure 301 may be protruding from the substrate 100 with a height from about 0.5 μm to about 2.0 μM. The semiconductor structure 301 may have a width in the first direction, X direction, from about 0.5 μm to about 2.0 μm and a length in the second direction, Y direction, from about 100 μM to about 8000 μm. The semiconductor structure 301 may include an n-doped semiconductor, for example, Si doped with antimony (Sb), arsenic (As) and/or phosphorous (P), and the n-doped semiconductor may be heavily doped such as, for example, n+-Si. Other suitable n-doped semiconductor may also be used to form the semiconductor structure 301. The semiconductor structure 301 may include a single crystal silicon. Although the sidewall of the semiconductor structure 301 may have many crystallographic orientations of Si, it is preferable that the sidewall of the semiconductor structure 301 is Si (111) crystal plane.