Laterally grown edge emitting laser
摘要
說(shuō)明書(shū)
In an exemplary embodiment of the present invention, the hard mask layer 200, the first dielectric layer 401 and the second dielectric layer 402 may be formed of the same material, for example, silicon oxide (SiO2), and may be integrated to form one dielectric layer to seal the edge emitting laser. In addition, the hard mask layer 200 may be removed during a planarization process, and may not be included in the final edge emitting laser structure.
The semiconductor structure 301 may be p-doped instead of n-doped. In an exemplary embodiment of the present invention, the semiconductor structure 301 may include a p-doped semiconductor, for example, a p-doped silicon, the cladding semiconductor layer 302 may include an n-doped semiconductor, for example, an n-doped silicon, the first III-V optical layer 501 may include a p-doped III-V semiconductor, for example, a p-doped AlGaAs, the second III-V optical layer 502 may include an undoped III-V semiconductor, for example, InGaAs, and the third III-V optical layer 503 may include an n-doped III-V semiconductor, for example, an n-doped AlGaAs.
