Laterally grown edge emitting laser
摘要
說明書
Materials currently used in manufacturing edge emitting laser include Group III-V semiconductors, particularly binary, ternary, and quaternary alloys of group III elements such as gallium, aluminum, and indium, and group V elements such as nitrogen, phosphorus, arsenic, and antimony. The edge emitting laser including III-V semiconductors may be fabricated by epitaxially growing a stack of semiconductor layers of different compositions and dopant concentrations on a substrate. In other words, these semiconductor layers are stacked from the substrate in a direction perpendicular to the substrate. One or more n-type layers may be formed on the substrate and one or more p-type layers may be formed over the one or more n-type layers with one or more layers of an active region formed therebetween. Electrical contacts are formed to connect the n-type and the p-type regions. Laser waveguide is formed using materials with different refractive indexes to confine the light. Light feedback loop is achieved by end mirrors at the end of the cavity or distributed mirrors along the laser waveguide.
