At block 250 of FIG. 2, a first, a second and a third III-V optical layers may be laterally and sequentially grown on and from each of the exposed sidewalls of the semiconductor structure 301. Referring to FIGS. 5A and 5B, a first III-V optical layer 501, a second III-V optical layer 502 and a third III-V optical layer 503 may be laterally and sequentially grown on and from each of the exposed sidewalls of the semiconductor structure 301, and the first, second and third III-V optical layers 501, 502 and 503 may extend in the second direction, Y direction. Each of the first, second and third III-V optical layers 501, 502 and 503 may independently include a III-V semiconductor which includes at least one of group III elements of boron (B), gallium (Ga), aluminum (Al) and indium (In), and at least one of group V elements of nitrogen (N), phosphorus (P), arsenic (As), antimony (Sb) and bismuth (Bi). The first III-V optical layer 501 may include an n-doped III-V semiconductor, and the third III-V optical layer 503 may include a p-doped III-V semiconductor. For example, the first III-V optical layer 501 may include an n-doped AlGaAs, and the third III-V optical layer 503 may include a p-doped AlGaAs. They may be heavily doped, for example, the first III-V optical layer 501 may include an AlGaAs n+, and the third III-V optical layer 503 may include a AlGaAs p+. Each of the first III-V optical layers 501 may be laterally grown on and from each of the sidewalls of the semiconductor structure 301 and may be directly connected to the semiconductor structure 301. For example, the AlGaAs n+ material may be grown on Si (111) crystal plane of the n+-Si material. Each of the second III-V optical layers 502 may be laterally grown on each of the exposed sidewalls of the first III-V optical layer 501. Each of the third III-V optical layers 503 may be laterally grown on each of the exposed sidewalls of the second III-V optical layers 502, with the second III-V optical layer 502 interposed between the first III-V optical layer 501 and the third III-V optical layer 503. The second III-V optical layer 502 may include a thin quantum well structure or multiple quantum well structures. The second III-V optical layer may include InGaAs. A width in the first direction for the first III-V optical layer 501 may be from about 20 nm to about 50 nm, for the second III-V optical layer 502 may be from about 5 nm to about 10 nm, and for the third III-V optical layer 503 may be from about 20 nm to about 50 nm. In an exemplary embodiment of the present invention, at least one of the first, second and third III-V optical layers 501, 502 and 503 may include a multilayer structure. Many processes may be used to grow III-V semiconductor materials on silicon surface, and may include, for example, metal organic chemical vapor deposition (MOCVD) process and molecular beam epitaxy (MBE) process. Many different III-V compounds may be laterally grown on the semiconductor structure 301, and may include various metal organic precursors such as, for example, trimethylgallium, trimethylaluminum, trimethylindium, tertiarybutylarsine and tertiarybutylphosphine. It is preferable that the III-V semiconductors are laterally, selectively, and epitaxially grown on Si (111) crystal plane sidewalls of the semiconductor structure 301. The growth of the III-V semiconductors may only be occurred along the sidewalls (Y-Z plane) extending in the second direction, Y direction. The sidewalls on each end (X-Z plane) may be blocked with oxide mask.