As shown in FIGS. 7A and 7B, two lasers, Laser 1 and Laser 2, are each formed at each side of the semiconductor structure 301. The figures also show two laser lights propagate in parallel mainly within the first, second and third III-V optical layers along the second direction, Y direction. In some instances, one sidewall of the semiconductor structure may be blocked, for example, by a silicon oxide mask, then only one laser may be laterally grown on the remaining exposed sidewall of the semiconductor structure 301.

As described above at block 240 of FIG. 2, n-dopant may be implanted to the semiconductor structure 301. However, alternatively, p-dopant may be implanted to the semiconductor structure 301. Then, the p-doped cladding semiconductor layers 302 may be replaced with n-doped cladding semiconductor layers. Thus, the first III-V optical layer 501 may include a p-doped III-V semiconductor, for example, a p-doped AlGaAs, the second III-V optical layer 502 may include an undoped III-V semiconductor, for example, InGaAs, and the third III-V optical layer 503 may include an n-doped III-V semiconductor, for example, an n-doped AlGaAs.

As described above, exemplary embodiments of the present invention provide an edge emitting laser laterally grown on a sidewall of a semiconductor structure, and also provide a method of forming the edge emitting laser by laterally growing III-V semiconductors on the sidewall of the semiconductor structure. The laterally grown edge emitting laser may be integrated with the MOSFET which may also be laterally grown on a sidewall of a semiconductor structure.