In the edge emitting laser, each of the first, second and third III-V optical layers may independently include a III-V semiconductor which includes at least one of group III elements of boron (B), gallium (Ga), aluminum (Al) and indium (In), and at least one of group V elements of nitrogen (N), phosphorus (P), arsenic (As), antimony (Sb) and bismuth (Bi). The semiconductor structure may include an n-doped semiconductor, the cladding semiconductor layer may include a p-doped semiconductor, the first III-V optical layer may include an n-doped III-V semiconductor, and the third III-V optical layer may include a p-doped III-V semiconductor. The semiconductor structure may include an n-doped silicon, the cladding semiconductor layer may include a p-doped silicon, the first III-V optical layer may include an n-doped AlGaAs, and the third III-V optical layer may include a p-doped AlGaAs. The second III-V optical layer may include a quantum well structure or multiple quantum well structures. The second III-V optical layer may include InGaAs. The first dielectric layer and the second dielectric layer may include silicon oxide. A width of the semiconductor structure in the first direction may be about 0.5 μm to about 2 μm, and a length of the semiconductor structure in the second direction may be about 100 μm to about 8000 μm. A width in the first direction for the first III-V optical layer may be about 20 nm to about 50 nm, for the second III-V optical layer may be about 5 nm to about 10 nm, and for the third III-V optical layer may be about 20 nm to about 50 nm. A width of the cladding semiconductor layer in the first direction may be about 0.5 μm to about 2 μm, and a length of the cladding semiconductor layer in the second direction may be about 100 μm to about 8000 μm. At least one of the first, second and third III-V optical layers may include a multilayer structure. The hard mask layer may include silicon oxide or silicon nitride.