In the method for manufacturing edge emitting lasers, each of the first, second and third III-V optical layers may independently include a III-V semiconductor including at least one of group III elements of boron (B), gallium (Ga), aluminum (Al) and indium (In), and at least one of group V elements of nitrogen (N), phosphorus (P), arsenic (As), antimony (Sb) and bismuth (Bi). The semiconductor structure may include an n-doped silicon, the cladding semiconductor layer may include a p-doped silicon, the first III-V optical layer may include an n-doped AlGaAs, the second III-V optical layer may include InGaAs, and the third III-V optical layer may include a p-doped AlGaAs. The laterally growing of the first III-V optical layer may include selective epitaxial growth of n-doped AlGaAs on n-doped silicon sidewall. The etching of the semiconductor substrate may include etching a silicon substrate about 0.5 μm to about 2 μM deep through a wet etching process with strong alkaline substances including tetramethylammonium hydroxide. The forming of the cladding semiconductor layers may include: depositing an amorphous p-doped silicon cladding layer on the semiconductor substrate; planarizing the amorphous p-doped silicon cladding layer to expose the hard mask layer; etching back to expose the first, second, and third III-V optical layers; and patterning the amorphous p-doped silicon cladding layer to form the cladding semiconductor layers. A width of the semiconductor structure in the first direction may be about 0.5 μm to about 2 μm, and a length of the semiconductor structure in the second direction may be about 100 μM to about 8000 μm. A width in the first direction for the first III-V optical layer may be about 20 nm to about 50 nm, for the second III-V optical layer may be about 5 nm to about 10 nm, and for the third III-V optical layer may be about 20 nm to about 50 nm.