FIG. 5A is a schematic cross-sectional diagram representing a first, a second and a third III-V optical layers laterally and sequentially grown on and from each of exposed sidewalls of the semiconductor structure, and FIG. 5B is a schematic top-view diagram representing the first, second and third III-V optical layers laterally and sequentially grown on and from each of the exposed sidewalls of the semiconductor structure according to an exemplary embodiment of the present invention;

FIG. 6A is a schematic cross-sectional diagram representing p-doped cladding semiconductor layers formed and directly connected to exposed sidewalls of the third III-V optical layers, and FIG. 6B is a schematic top-view diagram representing the p-doped cladding semiconductor layers formed and directly connected to the exposed sidewalls of the third III-V optical layers according to an exemplary embodiment of the present invention; and

FIG. 7A is a schematic cross-sectional diagram representing a second dielectric layer formed to cover the formed layers and structure, and a first contact structure formed to connect the semiconductor structure and second contact structures formed to connect the p-doped cladding semiconductor layers, and FIG. 7B is a schematic top-view diagram representing the second dielectric layer formed to cover the formed layers and structure, and the first contact structure formed to connect the semiconductor structure and the second contact structures formed to connect the p-doped cladding semiconductor layers according to an exemplary embodiment of the present invention.