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Electronic device

專利號(hào)
US10165673B2
公開日期
2018-12-25
申請(qǐng)人
Renesas Electronics Corporation(JP Tokyo)
發(fā)明人
Tatsuaki Tsukuda
IPC分類
H05K1/02; H03H7/01; H05K1/11; H05K1/18
技術(shù)領(lǐng)域
conductor,wiring,wire,board,in,pattern,terminal,mpc,fig,mpg
地域: Koutou-ku, Tokyo

摘要

A wiring board of an electronic device includes: a board terminal connected to a semiconductor device (semiconductor component); a wire formed in a first wiring layer and electrically connected to the board terminal; a conductor pattern formed in a second wiring layer and electrically connected to the wire via a via wire; and another conductor pattern formed in a third wiring layer and supplied with a first fixed potential. The conductor pattern and the another conductor pattern face each other with an insulating layer interposed therebetween, and an area of a region where the conductor pattern and the another conductor pattern face each other is larger than an area of the wire.

說明書

In a layout shown in FIG. 1 and FIG. 3, for example, at the board terminal 12A of the noise filter NF1 shown in FIG. 2, a resistance value is 36.34 [mΩ], an inductance value is 2.73 [nH], and a capacitance value is 9.60 [pF]. The above-described values are obtained as a result of calculation performed under the following conditions. That is, it is assumed that the wire 11A has a length of 5 mm, a width of 0.4 mm, and a thickness of 60 μm. Also, it is assumed that a thickness of the conductor pattern formed in each of the wiring layer WL2 and the wiring layer WL3 is 35 μm and a thickness of the conductor pattern formed in the wiring layer WL4 is 60 μm. Also, it is assumed that a thickness of each of an insulating layer 14A between the wiring layer WL1 and the wiring layer WL2 and an insulating layer 14B between the wiring layer WL3 and the wiring layer WL4 is 600 μm and a thickness of an insulating layer 14C between the wiring layer WL2 and the wiring layer WL3 is 100 μm.

Under the above-described calculation conditions, a cutoff frequency of the noise filter NF1 shown in FIG. 2 is 0.98 GHz. A noise filter having such a degree of the cutoff frequency can be sufficiently used as a noise filter used in a frequency band of substantially 150 kHz or more and 2 GHz or less. Further, by adjusting a length, a width, or a thickness of the wire 11A shown in FIG. 1, or adjusting the area of the region where the conductor pattern MPc and the conductor pattern MPg face each other, it is possible to easily adjust a cutoff frequency of the noise filter NF1.

權(quán)利要求

1
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