白丝美女被狂躁免费视频网站,500av导航大全精品,yw.193.cnc爆乳尤物未满,97se亚洲综合色区,аⅴ天堂中文在线网官网

Melt depth determination using infrared interferometric technique in pulsed laser annealing

專利號
US10219325B2
公開日期
2019-02-26
申請人
Jiping Li（US CA Santa Clara）
發(fā)明人
Jiping Li
IPC分類
H05B6/00; G01B11/06; H01L21/67
技術(shù)領(lǐng)域
radiation,substrate,radiant,coherent,can,melted,surface,detector,be,melt
地域： CA CA Palo Alto

摘要

Methods and apparatus for measuring the melt depth of a substrate during pulsed laser melting are provided. The apparatus can include a heat source, a substrate support with an opening formed therein, and an interferometer positioned to direct coherent radiation toward the toward the substrate support. The method can include positioning the substrate with a first surface in a thermal processing chamber, heating a portion of the first surface with a heat source, directing infrared spectrum radiation at a partially reflective mirror creating control radiation and interference radiation, directing the interference radiation to a melted surface and directing the control radiation to a control surface, and measuring the interference between the reflected radiation. The interference fringe pattern can be used to determine the precise melt depth during the melt process.

說明書

CROSS-REFERENCE TO RELATED APPLICATIONS

This application claims benefit of U.S. Provisional Patent Application Ser. No. 61/658,282, filed Jun. 11, 2012 (APPM/16930USL), which is incorporated herein by reference.

BACKGROUND OF THE INVENTION Field of the Invention

Technology described herein relates to methods and apparatus for in-situ measurement during pulsed laser melting.

Description of the Related Art

The fabrication of semiconductor integrated circuits has long required multiple steps of thermally processing a silicon wafer or other semiconductor wafer. The wafer may need to be raised to a temperature of 600° C. or above to thermally activate some processes. Such processes, may include, but are not limited to, chemical vapor deposition, silicidation, oxidation or nitridation, implant anneal, and dopant activation among others. Some of these processes may require temperatures in excess of 1000° C., 1200° C., or even above 1350° C., the last of which is relatively close to the melting point of silicon at 1416° C.

Pulsed laser melting (PLM) has been developed to dramatically increase the heating and cooling rates in processes such as implant annealing. PLM can lead to increased dopant activation by creating more uniform and localized melting and re-crystallization of amorphous semiconductor materials, such as for 3-dimensional memory or low-temperature poly-silicon applications.

權(quán)利要求

1
What is claimed is:1. An apparatus comprising:a chamber;a heat source disposed within the chamber, wherein the heat source comprises a laser positioned to direct focused laser radiation at a reduced area of a first surface of a substrate to be processed;a radiant interface detector comprising a radiation source, a partially reflective mirror, a control surface, and a radiation sensor,wherein the partially reflective mirror is positioned to direct control radiation towards the control surface and interference radiation towards a reduced area of a second surface of the substrate to be processed, the reduced area of the first surface opposite the reduced area of the second surface,and wherein the control surface is perpendicular to the direction from which the control radiation is received; anda substrate support disposed within the chamber, the substrate support having a substrate contact surface and a back side opposite the substrate contact surface, wherein the substrate contact surface is disposed between the laser and the radiation source, between the laser and partially reflective mirror, and between the laser and the radiation sensor.2. The apparatus of claim 1, wherein the back side is disposed between the laser and the radiation source, between the laser and the partially reflective mirror, and between the laser and the radiation sensor.3. The apparatus of claim 2, wherein the substrate support further comprises a lens disposed between the substrate contact surface and the back side, and wherein the lens is transparent to an infrared radiation from the radiation source.4. The apparatus of claim 1, wherein the radiant interface detector is at least partially disposed between the substrate contact surface and the back side of the substrate support.5. The apparatus of claim 1, wherein the radiation source is an infrared coherent radiation source.6. The apparatus of claim 1, wherein the substrate support has a plurality of openings between the substrate contact surface and the back side, and wherein the radiant interface detector is aligned with one of the plurality of openings.7. The apparatus of claim 1, wherein the radiant interface detector further comprises a light selective barrier.8. The apparatus of claim 1, wherein the radiant interface detector is an infrared interferometer.9. A processing chamber, comprising:a heat source disposed within the processing chamber, wherein the heat source comprises a laser positioned to direct focused laser radiation at a reduced area of a first surface of a substrate to be processed;an infrared interferometer comprising an infrared radiation source, a partially reflective mirror, a control surface comprising a reflective mirror, and a radiation sensor,wherein the partially reflective mirror is positioned to direct a control radiation towards the reflective mirror and interference radiation towards a reduced area of a second surface of the substrate to be processed, the reduced area of the first surface is opposite the reduced area of the second surface, andwherein the reflective mirror is perpendicular to the control radiation; anda substrate support disposed within the processing chamber, the substrate support having a substrate contact surface and a back side opposite the substrate contact surface,wherein the substrate contact surface is disposed between the laser and the infrared radiation source, between the laser and the partially reflective mirror, between the laser and the reflective mirror of the control surface, and between the laser and the radiation sensor.
微信群二維碼
意見反饋