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Pixel circuit, compensation method for pixel circuit and display device

專利號
US10867554B2
公開日期
2020-12-15
申請人
Hefei Xinsheng Optoelectronics Technology Co., Ltd.; BOE Technology Group Co., Ltd.(CN Hefei CN Beijing)
發(fā)明人
Min He; Song Meng; Fei Yang; Chun Cao; Xiaolong Wei
IPC分類
G09G3/3233; G09G3/3266; G09G3/3275
技術領域
voltage,transistor,signal,reset,scan,emitting,terminal,sensing,tft3,switching
地域: Anhui

摘要

The present disclosure relates to a pixel circuit, a compensation method and a display device. The pixel circuit includes a first switching circuit for supplying a data voltage to a first node in response to a first scan signal being valid, a second switching circuit for conductively connecting a sensing signal line with a second node in response to a second scan signal being valid, a reset circuit for supplying a reset voltage to the sensing signal line in response to a reset control signal being valid, a light-emitting element, and a driving transistor for enabling, when the light-emitting element emits light, the sensing signal line to be charged in response to the second scan signal being valid and the reset control signal being invalid, the voltage of the sensing signal line is sensed after it was charged so as to compensate the data voltage.

說明書

In phase T4 (corresponding to the light-emitting phase), GATE1=0, GATE2=1 and Spre_L=0. The first scan signal terminal GATE1 is applied with a low-level signal so as to control the first switching transistor TFT1 to turn off, the second scan signal terminal GATE2 is applied with a high-level signal so as to control the second switching transistor TFT2 to turn on. At the same time, the reset switch Spre_L is applied with a low-level signal so as to control the reset switch Spre_L to open. The Vgs stored in the energy storage capacitor Cst controls the driving transistor TFT3 to turn on, and then the first voltage terminal EVDD charges the parasitic capacitance of the sensing signal line SL through the driving transistor TFT3, that is, the point s is charged until the organic light-emitting diode OLED is lit. At this time, Vs is equal to the voltage VOLED of the anode of the organic light-emitting diode OLED. Due to a storage function of the energy storage capacitor Cst, as the voltage at the point s rises, Vg rises by the same amplitude, and Vgs remains unchanged. Since the second switching transistor TFT2 is turned on, the (parasitic capacitance of) the sensing signal line SL is charged through the second switching transistor TFT2.

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