In the illustrated embodiment, the second transistor T2 may be a low-temperature polysilicon (LTPS) thin film transistor and the third transistor T3 may be an oxide thin film transistor. The low-temperature polysilicon thin film transistor has relatively excellent electron mobility and stability, but has a relatively high possibility of occurrence of leakage current. Accordingly, the third transistor T3 is provided as an oxide thin film transistor to thereby effectively prevent a current leakage flowing through the third transistor T3.

Next, an example of a pixel that may be included in the display device of FIG. 1 will be described with reference to FIG. 5 to FIG. 7.

FIG. 5 is a circuit diagram of another example of a pixel included in the display device of FIG. 1. Referring to FIG. 5, a pixel PX-2 may include an organic light emitting diode OLED, a first transistor T11, a second transistor T12, a third transistor T13, a first capacitor Cst, and a second capacitor Cpr. The pixel PX-2 may be disposed in an i-th pixel row and a j-th pixel column. However, the pixel PX-2 according to the illustrated exemplary embodiment is substantially the same as the pixel of FIG. 2, except that a gate of a third transistor T3 is connected to initialization power VINT, and therefore the same reference numerals are used for the same or similar components, and a redundant description will be omitted.