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Spin orbital torque based microwave assisted magnetic recording with dual spin hall layers or wrap around spin hall layer

專利號(hào)
US10867626B1
公開日期
2020-12-15
申請(qǐng)人
Western Digital Technologies, Inc.(US CA San Jose)
發(fā)明人
Zhanjie Li; Suping Song; Lijie Guan
IPC分類
G11B5/37; G11B5/235; G11B5/31; G11B5/127; G11B5/00
技術(shù)領(lǐng)域
spin,hall,stl,sot,layer,trailing,shield,charge,write,mfs
地域: CA CA San Jose

摘要

A magnetic recording head includes a trailing shield and a main pole. A trailing shield gap is between the trailing shield and the main pole. A spin orbital torque structure is within the trailing shield gap. The spin orbital torque structure includes a spin torque layer having a first side and a second side at a media facing surface. A first spin Hall layer is along the first side of the spin torque layer. A second spin Hall layer is along the second side of the spin torque layer. The first spin Hall layer comprises a heavy metal material having a positive spin Hall angle. The second spin Hall layer comprises a heavy metal material having a negative spin Hall angle.

說(shuō)明書

As shown in FIG. 6B, the first spin Hall layer 252 comprises a heavy metal material having a positive spin Hall angle, such as platinum, while the second spin Hall layer 253 comprises a heavy metal material having a negative spin Hall angle, such as beta phase tungsten (β-W) or beta phase tantalum (β-Ta). The charge current through the first spin Hall layer 252 generates a spin current 292 at the surface of the first spin Hall layer 252 with a magnetization direction down 292D proximate the first side 271-1 and the second side 271-2 of the STL 271 and a magnetization direction up 292U away from the first side 271-1 and the second side 271-2 of the STL 271 due to the positive spin Hall angle of the first spin Hall layer 252. The charge current through the second spin Hall layer 253 generates a spin current 293 at the surface of the second spin Hall layer 253 with a magnetization direction down 293D proximate to the third side 271-3 of the STL 271 and magnetization direction up 293U away from the STL 271 due to the negative spin Hall angle of the second spin Hall layer 253. Since there are three charge current paths as along the first side 271-1, second side 271-2, and third side 271-3 of the STL 271, there are three ampere magnetic fields generated by the flowing charge currents. Not wishing to be bound by theory unless explicitly set forth in the claims, it is believed that the STL 271 experiences less degradation due to being under the influences of three ampere magnetic fields in comparison to one ampere magnetic field.

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