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Magnetic recording medium having a dimensional variation

專利號
US10867630B2
公開日期
2020-12-15
申請人
Sony Corporation(JP Tokyo)
發(fā)明人
Noboru Sekiguchi; Minoru Yamaga
IPC分類
G11B5/62; G11B5/733; G11B5/706; C23C14/00; G11B5/735
技術(shù)領(lǐng)域
recording,magnetic,layer,medium,in,σmd,δw,nm,or,average
地域: Tokyo

摘要

The average thickness tT of a magnetic recording medium meets the requirement that tT≤5.5 [μm], and the dimensional change amount Δw in the width direction of the magnetic recording medium with respect to the tension change in the longitudinal direction of the magnetic recording medium meets the requirement that 700 ppm/N≤Δw.

說明書

A magnetic tape was obtained in a similar manner to Example 7 except that the coating thickness of the paint for recording layer formation was changed such that the average thickness tm of the recording layer was 40 nm.

Example 13

(SUL Deposition Step)

First, under the following deposition conditions, a CoZrNb layer (SUL) of 10 nm in average thickness was formed on the surface of a long polymer film as a non-magnetic support. Note that a PEN film was used as the polymer film.

Deposition method: DC magnetron sputtering method

Target: CoZrNb target

Gas species: Ar

Gas pressure: 0.1 Pa

(Deposition Step for First Seed Layer)

Next, a TiCr layer (first seed layer) of 5 nm in average thickness was deposited on the CoZrNb layer under the following deposition conditions.

Sputtering method: DC magnetron sputtering method

Target: TiCr target

Ultimate vacuum: 5×10?5 Pa

Gas species: Ar

Gas pressure: 0.5 Pa

(Deposition Step for Second Seed Layer)

Next, a NiW layer (second seed layer) of 10 nm in average thickness was deposited on the TiCr layer under the following deposition conditions.

Sputtering method: DC magnetron sputtering method

Target: NiW target

Ultimate vacuum: 5×10?5 Pa

Gas species: Ar

Gas pressure: 0.5 Pa

(Deposition Step for First Base Layer)

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