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Active random access memory

專利號
US10867642B2
公開日期
2020-12-15
申請人
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED(TW Hsinchu)
發(fā)明人
Hsin-Cheng Chen; Jung-Rung Jiang; Yen-Hao Huang
IPC分類
G11C7/10; G11C11/418; G06F12/00; G11C11/419; G06F12/02; G11C7/22
技術(shù)領(lǐng)域
write,read,ns,commands,clock,master,memory,command,circuitry,pattern
地域: Hsinchu

摘要

Systems and methods for processing commands at a random access memory. A series of commands are received to read data from the random access memory or to write data to the random access memory. The random access memory can process commands at a first rate when the series of commands matches a pattern, and at a second, slower, rate when the series of commands does not match the pattern. A determination is made as to whether the series of commands matches the pattern based on at least a current command and a prior command in the series of commands. A ready signal is asserted when said determining determines that the series of commands matches the pattern, where the random access memory is configured to receive and process commands faster than the second rate when the pattern is matched and the ready signal is asserted over a period of multiple commands.

說明書

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19

FIG. 3 is an example of a second mechanism for transmitting read commands that takes advantage of pattern detection circuitry in a memory, in accordance with some embodiments.

FIG. 4 is a diagram depicting read operation performance of a memory that includes pattern matching circuitry under a worst case scenario.

FIGS. 5A and 5B are flow diagrams depicting example processes that utilize a ready signal or waiting a time interval to control read operations of a memory, respectively, in accordance with some embodiments.

FIG. 6 is a diagram depicting a memory that includes a second, parallel write path and pattern detecting circuitry, in accordance with some embodiments.

FIG. 7 is a timing diagram indicating one mechanism for handling transmission of write commands to a conventional memory that completes write operations in differing times.

FIG. 8 is a timing diagram illustrating a second mechanism for transmitting write commands that takes advantage of pattern detection circuitry in a memory.

FIG. 9 is a diagram depicting performance of a memory that includes pattern matching circuitry under a worst case scenario.

FIGS. 10A and 10B are flow diagrams depicting example processes that utilize a ready signal or waiting a time interval to control write operations of a memory, in accordance with some embodiments.

DETAILED DESCRIPTION

權(quán)利要求

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