In yet another embodiment of the present disclosure depicted in FIG. 3a, the p-MTJ in FIG. 1a is modified by adding a second non-magnetic spacer 26 on FL 17, followed in order by a second SyAP pinned layer 25, and an uppermost capping layer 18. The second SyAP pinned layer has AP1 layer 24 contacting a top surface of the second non-magnetic spacer, a middle AFC layer 23, and AP2 layer 22 on the middle AFC layer. Accordingly, a first spin valve structure 10-1 comprised of p-MTJ layers 11-17 is formed on substrate 8, and a second spin valve structure 10-2 comprised of FL 17, second spacer 26, SyAP layer 25, and capping layer 18 is formed on structure 10-1. The double stack of layers is often referred to as a dual magnetic tunnel junction (DMTJ) 10-1/10-2. Layers 25, 26 may have the same composition as in layers 15, 16, respectively, that were described previously.
