Initialization process for magnetic random access memory (MRAM) production
摘要
說明書
In summary, we have observed that a typical switching error rate in the range of 30 ppm to 100 ppm for p-MTJ cells that have not been initialized is reduced significantly to less than 10 ppm when the p-MTJ cells are subjected to an initialization process according to an embodiment of the present disclosure. Furthermore, the initialization process may be repeated one or more times after device fabrication to offset the effect of stray fields or temperature excursions that may cause a recurrence of multiple domains in the free layer and pinned layer.
While this disclosure has been particularly shown and described with reference to, the preferred embodiment thereof, it will be understood by those skilled in the art that various changes in form and details may be made without departing from the spirit and scope of this disclosure.
