FIG. 5 is a cross-sectional view of the p-MTJ in FIG. 4 during an initialization process comprising application of a horizontal magnetic field according to a first embodiment of the present disclosure.

FIGS. 6a-6b are cross-sectional views showing equal probabilities of magnetizations in the p-MTJ layers in FIG. 5 after the applied magnetic field is removed and interfacial PMA generates vertical magnetic domains in the free layer and AP1 layer, and AF coupling is responsible for AP2 magnetization antiparallel to AP1 magnetization according to an embodiment of the present disclosure.

FIG. 7 is a cross-sectional view of the p-MTJ in FIG. 4 during an initialization process comprising application of a vertical magnetic field according to a second embodiment of the present disclosure.

FIG. 8 is a cross-sectional view of showing magnetizations in the p-MTJ layers in FIG. 7 after the vertical magnetic field is removed, and AF coupling is responsible for AP2 magnetization that is antiparallel to AP1 magnetization according to an embodiment of the present disclosure.

FIG. 9 is a top-down view of an array of p-MTJ cells that are insulated by an encapsulation layer and formed according to an embodiment of the present disclosure.