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Read circuit for magnetic tunnel junction (MTJ) memory

專利號
US10867652B2
公開日期
2020-12-15
申請人
Taiwan Semiconductor Manufacturing Co., Ltd.(TW Hsinchu)
發(fā)明人
Gaurav Gupta; Zhiqiang Wu
IPC分類
G11C11/00; G11C11/16; H01L27/22; H01L43/02; H01L43/10
技術(shù)領(lǐng)域
mtj,nlr,rnlr,memory,read,layer,imtj,current,cell,tmr
地域: Hsin-Chu

摘要

In some embodiments, the present application provides a memory device. The memory device includes a first current mirror transistor, a first pull-up read-enable transistor, an MTJ memory cell, a first pull-down read-enable transistor, and a first non-linear resistance device. The MTJ memory cell includes an MTJ memory element and a first access transistor. The first non-linear resistance device is coupled in series and between the first pull-up read-enable transistor and the first current mirror transistor. The first non-linear resistance device is configured to provide a first resistance when conducting a first current and a second resistance greater than the first resistance when conducting a second current smaller than the first current.

說明書

FIG. 3 illustrates a block diagram for some embodiments of a reading circuit that can be used in the memory device of FIG. 2.

FIG. 4A illustrates a circuit schematic for some embodiments of a data path that can be used in the memory device of FIG. 2.

FIG. 4B illustrates a circuit schematic for some alternative embodiments of a data path that can be used in the memory device of FIG. 2.

FIGS. 5-6 illustrate timing diagrams depicting some embodiments of reading operations for a memory device, such as the memory device shown in FIGS. 3-4B.

FIG. 7 illustrates a cross-sectional diagram showing some embodiments of a memory device that includes an MTJ memory element.

FIG. 8 illustrates a top view of the memory device of FIG. 7, as indicated by the cut-lines in FIG. 7.

FIG. 9 illustrates a flowchart of some embodiments of a method of reading the MTJ memory device.

FIG. 10 shows an example load line analysis of a series connection of an MTJ memory cell and a forward biased SCR used for reading the MTJ memory device.

DETAILED DESCRIPTION

權(quán)利要求

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