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Read circuit for magnetic tunnel junction (MTJ) memory

專利號
US10867652B2
公開日期
2020-12-15
申請人
Taiwan Semiconductor Manufacturing Co., Ltd.(TW Hsinchu)
發(fā)明人
Gaurav Gupta; Zhiqiang Wu
IPC分類
G11C11/00; G11C11/16; H01L27/22; H01L43/02; H01L43/10
技術(shù)領(lǐng)域
mtj,nlr,rnlr,memory,read,layer,imtj,current,cell,tmr
地域: Hsin-Chu

摘要

In some embodiments, the present application provides a memory device. The memory device includes a first current mirror transistor, a first pull-up read-enable transistor, an MTJ memory cell, a first pull-down read-enable transistor, and a first non-linear resistance device. The MTJ memory cell includes an MTJ memory element and a first access transistor. The first non-linear resistance device is coupled in series and between the first pull-up read-enable transistor and the first current mirror transistor. The first non-linear resistance device is configured to provide a first resistance when conducting a first current and a second resistance greater than the first resistance when conducting a second current smaller than the first current.

說明書

The present disclosure provides many different embodiments, or examples, for implementing different features of this disclosure. Specific examples of components and arrangements are described below to simplify the present disclosure. These are, of course, merely examples and are not intended to be limiting. For example, the formation of a first feature over or on a second feature in the description that follows may include embodiments in which the first and second features are formed in direct contact, and may also include embodiments in which additional features may be formed between the first and second features, such that the first and second features may not be in direct contact. In addition, the present disclosure may repeat reference numerals and/or letters in the various examples. This repetition is for the purpose of simplicity and clarity and does not in itself dictate a relationship between the various embodiments and/or configurations discussed.

Further, spatially relative terms, such as “beneath,” “below,” “l(fā)ower,” “above,” “upper” and the like, may be used herein for ease of description to describe one element or feature's relationship to another element(s) or feature(s) as illustrated in the figures. The spatially relative terms are intended to encompass different orientations of the device in use or operation in addition to the orientation depicted in the figures. The apparatus may be otherwise oriented (rotated 90 degrees or at other orientations), and the spatially relative descriptors used herein may likewise be interpreted accordingly.

權(quán)利要求

1
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