In view of above, the present disclosure provides reading circuits and techniques for reading MTJ memory cells that enhance a ratio for the read-current between MTJ's P-state and AP-state beyond a ratio enabled by an effective TMR of an MTJ array TMR_array, thereby improving the read disturb rate (RDR) while maintaining the pre-designed low write current. One or more non-linear resistors (NLRs) are added to the read system. In some embodiments, a first non-linear resistor (NLR) is connected in series with an MTJ cell to enhance the effective TMR by providing a greater resistance when the MTJ cell is in a high-resistance (e.g., AP-state) and a smaller resistance when the MTJ cell is in a low-resistance state (e.g., P-state). The effective TMR can be designed to be even greater than the TMR of the MTJ itself. In some further embodiments, a second non-linear resistor (NLR) may also be added in series with a reference resistor to improve the readability further. In some embodiments, the non-linear resistor (NLR) can have a current controlled negative resistance, i.e., an S-type negative resistance (NR). An example IV characteristic curve of an S-type negative resistor is shown in FIG. 10. The S-type negative resistor may be a component (e.g., forwardly biased thyristor, SCR, diac, triac, etc.) or an equivalent sub-circuit.