Method for testing a memory device
地域：
CT
CT Norwalk
摘要
A computer-implemented method for testing a printed memory device is provided. The computer-implemented method includes performing, by a controller, a first read operation on a cell of the printed memory device; performing, by the controller, a second read operation on the cell; converting, by the controller, a first result of the first read operation and a second results of the second read operation to a first digital value and a second digital value, respectively; comparing, by the controller, the first digital value and the second digital value to a first predetermined threshold and a second predetermined threshold, respectively, wherein the first predetermined threshold is a low threshold and the second predetermined threshold is a high threshold; and providing, by the controller, a result of the test for the printed memory device based on the comparing.
說明書
The present teachings relate to the field of memory devices and product marking, for example, products including a tag or label for testing and/or inventory control and, more particularly, to readers and scanners for reading and/or writing data from/to a product marked with an electronic memory, tag, or label.
權(quán)利要求
What is claimed is:1. A computer-implemented method for testing a printed memory device, the computer-implemented method comprising:performing, by a controller, a first read operation on a cell of the printed memory device; performing, by the controller, a second read operation on the cell; determining, by the controller, a difference in charge values between a first charge value associated with the first read operation and a second charge value associated with the second read operation; comparing, by the controller, the difference in charge values to a first predetermined threshold, a second predetermined threshold, or both the first predetermined threshold and the second predetermined threshold, wherein the first predetermined threshold is a low threshold and the second predetermined threshold is a high threshold; converting, by the controller, the difference in charge values to a digital representation based on the comparing; and providing, by the controller, a result of the test for the printed memory device based on the converting. 2. The computer-implemented method of claim 1 , wherein the first predetermined threshold is a digital value that represents a charge of about 0.1 nC to about 1 nC. 3. The computer-implemented method of claim 1 , wherein the first read operation and the second read operation is performed using a voltage that is less than a voltage that would change a state of the cell. 4. The computer-implemented method of claim 1 , wherein the second predetermined threshold is a digital value that represents a charge of about 9 nC to about 11 nC. 5. The computer-implemented method of claim 1 , wherein the first predetermined threshold and the second predetermined threshold are based on the characteristics of the printed memory device. 6. The computer-implemented method of claim 1 , wherein the result is that the cell is not properly connected if the difference in charge values do not meet the first predetermined threshold, the second predetermined threshold, or both the first predetermined threshold and the second predetermined threshold. 7. The computer-implemented method of claim 1 , wherein the result is that the cell is properly connected if the difference in charge values meet the first predetermined threshold, the second predetermined threshold, or both the first predetermined threshold and the second predetermined threshold. 8. An electronic system for testing a test cell comprising:a host device; a component subsystem installed in the host device, wherein the component subsystem comprises:a test module configured to receive a first test voltage value and a second test voltage value and to output a first test voltage and a second test voltage; and a test cell configured to receive the first test voltage and the second test voltage output by the test module, the test cell comprising a wordline, a bitline, and a memory film, the memory film interposed between the wordline and the bitline, wherein the test cell is configured to output a first response and a second response in response to receiving the first test voltage and the second test voltage; and a host controller configured to determine a difference in charge values between a first charge value associated with a first read operation and a second charge value associated with a second read operation, compare the difference in charge values to a first predetermined threshold, a second predetermined threshold, or both the first predetermined threshold and the second predetermined threshold, wherein the first predetermined threshold is a low threshold and the second predetermined threshold is a high threshold, and convert the difference in charge values to a digital representation based on the difference in charge values that are compared. 9. The electronic system of claim 8 , wherein the host controller is configured to output a result of the testing cell for a test call based on the difference in charge values that are compared. 10. The electronic system of claim 8 , wherein the first predetermined threshold is a digital value that represents a charge of about 0.1 nC to about 1 nC. 11. The electronic system of claim 8 , wherein the first test voltage and the second test voltage that are received by the test cell are the first read operation and the second read operation, respectively, that are performed using a voltage that is less than a voltage that would change a state of the test cell. 12. The electronic system of claim 8 , wherein the second predetermined threshold is a digital value that represents a charge of about 9 nC to about 11 nC. 13. The electronic system of claim 8 , wherein the first predetermined threshold and the second predetermined threshold are based on the characteristics of the test cell. 14. The electronic system of claim 9 , wherein the result is that the test cell is not properly connected if the difference in charge values do not meet the first predetermined threshold, the second predetermined threshold, or both the first predetermined threshold and the second predetermined threshold. 15. The electronic system of claim 9 , wherein the result is that the test cell is properly connected if the difference in charge values meet the first predetermined threshold, the second predetermined threshold, or both the first predetermined threshold and the second predetermined threshold. 16. The electronic system of claim 8 , wherein the first test voltage and the second test voltage are the same.
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