The method 600 continues by selecting, at 610, a low voltage that is used for a read operation on the memory cell and sending an indication of low voltage that was selected to a controller. The low voltage that is used in the read operation is to ensure that there is a good contact in the cells of the printed memory device. By using a voltage below the switching voltage, any switching effects of the polarization of the cells can be avoided and the data stored in the cells are not affected. The low voltage only has the cell capacitive value plus parasitic capacitance picked up from the leads (of which the total can be anywhere from 0.1 nC to 1 nC of charge). By way of one non-limiting example, the low voltage for XPM can be about 12 volts or less depending on the thickness of the XPM. Other voltages can be considered low voltages based on the characteristics of the particular printed memory device. In some examples, the controller can be the testing module controller 514.

The method 600 continues by performing, at 615, a first low voltage read operation for each cell of the printed memory device by the microcontroller or the ASIC and is stored in memory 515 to write it back later. In some examples, prior to performing the low voltage read operation, an individual read operation can be performed on BLs and WLs for each cell of the printed memory device by placing all other WL and BL in high impedance before the read operation is performed.

The method 600 continues by converting, at 620, a first response pulse associated with the first read operation to a first data metric. For example, the first response pulse can be converted to a first digital value using the testing module controller 514.