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Method for testing a memory device

專利號
US10867654B2
公開日期
2020-12-15
申請人
XEROX CORPORATION(US CT Norwalk)
發(fā)明人
Christopher P. Caporale; Alberto Rodriguez; Markus R. Silvestri; Terry L. Street
IPC分類
G11C7/18; G11C11/22; G11C8/14
技術領域
xpm,memory,cell,0.36,0.00,printed,0.04,threshold,in,read
地域: CT CT Norwalk

摘要

A computer-implemented method for testing a printed memory device is provided. The computer-implemented method includes performing, by a controller, a first read operation on a cell of the printed memory device; performing, by the controller, a second read operation on the cell; converting, by the controller, a first result of the first read operation and a second results of the second read operation to a first digital value and a second digital value, respectively; comparing, by the controller, the first digital value and the second digital value to a first predetermined threshold and a second predetermined threshold, respectively, wherein the first predetermined threshold is a low threshold and the second predetermined threshold is a high threshold; and providing, by the controller, a result of the test for the printed memory device based on the comparing.

說明書

The present method has advantages over conventional approaches. The first advantage provides for an individual WL or BL is able to be detected as not being connected or defective in terms of leakage using the present method. In contrast, the conventional approaches involve shorting the all BL's together and all WL's together to make a single measurement, which has at least two disadvantages. The first disadvantage includes the possibility of determining whether a card was “present” with only a couple good connections, instead of all 5. The second disadvantage includes using a voltage of 1.8V versus the present method that uses a measurement using ?12V, which allows a higher noise tolerance in the measurements that increases reliability. The second advantage avoids the need for the additional writes and reads to determine if the connection is good, which may not fatigue the material of the printed memory device as much as a full read as the state of the material is not changing. The present method may only change a small portion of the polarization if any. However, after thousands of card detection executions, the state of the cells is still in or close to the original state. This helps in extending the life of the printed memory device as there is already a limited amount by which the printed memory device can be written or read.

Example 1

權利要求

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