Method for testing a memory device
摘要
說明書
By convention a flipped cell represents a ‘0’. Setting the threshold at 1 nC this means that cell 0 is 0, cell 1 is 1, cell 2 is 0, cell 3 is 1, cell 4 is 0, cell 5 is 0, etc. With cell 0 representing the rightmost digit, these values translate into the binary number of 0000000000000000000001010 or 10 in the decimal system. Since the reading process destroys the information the number 10 was written back to the XPM.
The XPM of Example 1 was removed from the reader. The pulse width is set to a much smaller value, i.e., 16 us. The voltage to 13V. A reading at these settings yielded values in Table 3. This is interpreted that not a single cell is connected. The values are, in essence, capacitive load of the leads. This reading may also be used as an offset measurement, i.e., these capacitive leads may be subtracted from future readings to remove the effect of the leads. This may be only needed for long leads where the capacitive load is large.
