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Method for testing a memory device

專利號
US10867654B2
公開日期
2020-12-15
申請人
XEROX CORPORATION(US CT Norwalk)
發(fā)明人
Christopher P. Caporale; Alberto Rodriguez; Markus R. Silvestri; Terry L. Street
IPC分類
G11C7/18; G11C11/22; G11C8/14
技術(shù)領(lǐng)域
xpm,memory,cell,0.36,0.00,printed,0.04,threshold,in,read
地域: CT CT Norwalk

摘要

A computer-implemented method for testing a printed memory device is provided. The computer-implemented method includes performing, by a controller, a first read operation on a cell of the printed memory device; performing, by the controller, a second read operation on the cell; converting, by the controller, a first result of the first read operation and a second results of the second read operation to a first digital value and a second digital value, respectively; comparing, by the controller, the first digital value and the second digital value to a first predetermined threshold and a second predetermined threshold, respectively, wherein the first predetermined threshold is a low threshold and the second predetermined threshold is a high threshold; and providing, by the controller, a result of the test for the printed memory device based on the comparing.

說明書

Hence for a successful read it is paramount to have all cells connected because having less than all the cells connected will not produce a large enough charge if their polarization vectors were to be flipped. Disconnecting and reconnecting the memory and reading it again will not work either because the previous connected cells are now already flipped. However, more problematic is that the user will not even know that there was a bad connection because disconnected cells produce very low charge values that still get converted into bit 1 (non-flipping cells producing low values are associated with bit state 1). As a result, a digital read value of the memory is still produced, but unknowingly to the user, it is now wrong.

Accordingly, what is needed is an improved method for both detecting the presence of XPM devices and diagnosing the integrity of the memory device.

SUMMARY

The following presents a simplified summary in order to provide a basic understanding of some aspects of one or more implementations of the present teachings. This summary is not an extensive overview, nor is it intended to identify key or critical elements of the present teachings, nor to delineate the scope of the disclosure. Rather, its primary purpose is merely to present one or more concepts in simplified form as a prelude to the detailed description presented later.

權(quán)利要求

1
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