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Method for testing a memory device

專利號
US10867654B2
公開日期
2020-12-15
申請人
XEROX CORPORATION(US CT Norwalk)
發(fā)明人
Christopher P. Caporale; Alberto Rodriguez; Markus R. Silvestri; Terry L. Street
IPC分類
G11C7/18; G11C11/22; G11C8/14
技術(shù)領(lǐng)域
xpm,memory,cell,0.36,0.00,printed,0.04,threshold,in,read
地域: CT CT Norwalk

摘要

A computer-implemented method for testing a printed memory device is provided. The computer-implemented method includes performing, by a controller, a first read operation on a cell of the printed memory device; performing, by the controller, a second read operation on the cell; converting, by the controller, a first result of the first read operation and a second results of the second read operation to a first digital value and a second digital value, respectively; comparing, by the controller, the first digital value and the second digital value to a first predetermined threshold and a second predetermined threshold, respectively, wherein the first predetermined threshold is a low threshold and the second predetermined threshold is a high threshold; and providing, by the controller, a result of the test for the printed memory device based on the comparing.

說明書

In accordance with examples of the present disclosure, a computer-implemented method for testing a printed memory device is provided. The computer-implemented method comprises performing, by a controller, a first read operation on a cell of the printed memory device; performing, by the controller, a second read operation on the cell; converting, by the controller, the first result of the first read operation and the second result of the second read operation to a first digital value and a second digital value, respectively; comparing, by the controller, the first digital value and the second digital value to a first predetermined threshold and a second predetermined threshold, respectively, wherein the first predetermined threshold is a low threshold and the second predetermined threshold is a high threshold; and providing, by the controller, a result of the test for the printed memory device based on the comparing.

In some examples, the first predetermined threshold is a digital value that represents a charge of about 0.1 nC to about 1 nC.

In some examples, the first read operation and the second read operation is performed using a voltage that is less than a voltage that would change a state of the cell.

In some examples, the second predetermined threshold is a digital value that represents a charge of about 9 nC to about 11 nC or larger.

In some examples, the first predetermined threshold and the second predetermined threshold are based on the characteristics of the printed memory device.

In some examples, the result is that the cell is not properly connected if the first digital value and the second digital value do not meet the first predetermined threshold and the second predetermined threshold. The cell can be not properly connected if the cell is accidently connected to ground

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