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Method for testing a memory device

專利號
US10867654B2
公開日期
2020-12-15
申請人
XEROX CORPORATION(US CT Norwalk)
發(fā)明人
Christopher P. Caporale; Alberto Rodriguez; Markus R. Silvestri; Terry L. Street
IPC分類
G11C7/18; G11C11/22; G11C8/14
技術(shù)領(lǐng)域
xpm,memory,cell,0.36,0.00,printed,0.04,threshold,in,read
地域: CT CT Norwalk

摘要

A computer-implemented method for testing a printed memory device is provided. The computer-implemented method includes performing, by a controller, a first read operation on a cell of the printed memory device; performing, by the controller, a second read operation on the cell; converting, by the controller, a first result of the first read operation and a second results of the second read operation to a first digital value and a second digital value, respectively; comparing, by the controller, the first digital value and the second digital value to a first predetermined threshold and a second predetermined threshold, respectively, wherein the first predetermined threshold is a low threshold and the second predetermined threshold is a high threshold; and providing, by the controller, a result of the test for the printed memory device based on the comparing.

說明書

The first test response and the second test response that are output by the test cell are integrated to a charge through an integrating OpAmp arranged within an Application Specific Integrated Circuit (ASIC). The charge is read on a capacitor in the circuit as a voltage that gets converted into a digital value.

In some examples, the host controller is configured to output a result of the testing for the test call based on the comparing. In some examples, the first predetermined threshold is a digital value that represents a charge of about 0.1 nC to about 1 nC. In some examples, the first test voltage and the second test voltage that are received by the test cell are a first read operation and a second read operation, respectively, that are performed using a voltage that is less than a voltage that would change a state of the test cell. In some examples, the second predetermined threshold is a digital value that represents a charge of about 9 nC to about 11 nC or larger. In some examples, the first predetermined threshold and the second predetermined threshold are based on the characteristics of the test cell. In some examples, the result is that the test cell is not properly connected if the first digital value and the second digital value do not meet the first predetermined threshold and the second predetermined threshold. In some examples, the result is that the test cell is properly connected if the first digital value and the second digital value meet the first predetermined threshold and the second predetermined threshold. In some examples, the first test voltage and the second test voltage are the same.

BRIEF DESCRIPTION OF THE DRAWINGS

權(quán)利要求

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