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Method for testing a memory device

專利號
US10867654B2
公開日期
2020-12-15
申請人
XEROX CORPORATION(US CT Norwalk)
發(fā)明人
Christopher P. Caporale; Alberto Rodriguez; Markus R. Silvestri; Terry L. Street
IPC分類
G11C7/18; G11C11/22; G11C8/14
技術(shù)領(lǐng)域
xpm,memory,cell,0.36,0.00,printed,0.04,threshold,in,read
地域: CT CT Norwalk

摘要

A computer-implemented method for testing a printed memory device is provided. The computer-implemented method includes performing, by a controller, a first read operation on a cell of the printed memory device; performing, by the controller, a second read operation on the cell; converting, by the controller, a first result of the first read operation and a second results of the second read operation to a first digital value and a second digital value, respectively; comparing, by the controller, the first digital value and the second digital value to a first predetermined threshold and a second predetermined threshold, respectively, wherein the first predetermined threshold is a low threshold and the second predetermined threshold is a high threshold; and providing, by the controller, a result of the test for the printed memory device based on the comparing.

說明書

As used herein, “data” refers to any type of information, signal, or other result that is obtained from or sent to an electrical device such as a memory device, an integrated circuit, or another electrical device, or any information obtained from monitoring, interrogating, querying, or measuring, etc., an electrical device. The term “data” includes digital data, analog data, voltage values, current values, resistance values, vector values, scalar values, and/or flux values.

The XPM reading apparatus currently lacks a method of determining presence of the memory and proper electrical connection to the contacts robustly, without reading and writing fully to the memory. Generally speaking, implementations of the present disclosure provides for a method for reading a printed memory device, such as a XPM, which is more robust than the standard method used for reading the memory. The method uses XPM ASIC functions to set bit lines and word lines in high impedance such that individual cells of the memory are addressed. This allows for each cell to be verified as making good contact and also validates that the cell not producing excessive currents resulting in excessive charges, sometimes referred to as “l(fā)eaking” or being “shorted”. As one non-limiting example, 5 WLs amongst themselves and 5 BLS amongst themselves are physically connected to make a single large cell. In another non-limiting example, the memory device is read, written to, and then read back, which requires 3 memory operations to be performed. In just another non-limiting examples, a low voltage pulse is used to determine if all the cells are connected. This low voltage does not affect the memory in any way as it is below the switching voltage of the cell. This offers a way to check to make sure all WL pads and BL pads are making good contact, and ensures there are no shorted cells.

權(quán)利要求

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