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Main word line driver circuit

專利號
US10867661B2
公開日期
2020-12-15
申請人
Micron Technology, Inc.(US ID Boise)
發(fā)明人
Tae H. Kim; Christopher J. Kawamura
IPC分類
G11C7/22; G11C11/408; G11C11/4076
技術(shù)領(lǐng)域
word,transistor,gr0,swd,voltage,swds,volts,vnwl,nmos,vccp
地域: ID ID Boise

摘要

A main word line circuit provides a first and second row factor signals. The main word line circuit includes a pull-up circuit to drive a global word line to follow a first decoded address signal when the first row factor signal is at a first value. The main word line circuit includes an intermediate voltage circuit to drive the global word line to follow a value of the second row factor signal. A processing device drives the global word line to an active state by setting the first row factor signal to the first value when the first decoded address signal is at a high state, and drives the global word line to follow a value of the second row factor signal by setting the first row factor signal to the second value while the first decoded address signal is at the high state.

說明書

TABLE 2 ARMW0 ARMW0F ARMW1 ARMW1F RF3F<0> RF3<0> RF3F<1> RF3<1> GR0 GR1 GR2 GR3 H L L H L H H L A P P P H L L H H I H L I P P P H L L H H L L H

權(quán)利要求

1
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