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Main word line driver circuit

專利號(hào)
US10867661B2
公開(kāi)日期
2020-12-15
申請(qǐng)人
Micron Technology, Inc.(US ID Boise)
發(fā)明人
Tae H. Kim; Christopher J. Kawamura
IPC分類
G11C7/22; G11C11/408; G11C11/4076
技術(shù)領(lǐng)域
word,transistor,gr0,swd,voltage,swds,volts,vnwl,nmos,vccp
地域: ID ID Boise

摘要

A main word line circuit provides a first and second row factor signals. The main word line circuit includes a pull-up circuit to drive a global word line to follow a first decoded address signal when the first row factor signal is at a first value. The main word line circuit includes an intermediate voltage circuit to drive the global word line to follow a value of the second row factor signal. A processing device drives the global word line to an active state by setting the first row factor signal to the first value when the first decoded address signal is at a high state, and drives the global word line to follow a value of the second row factor signal by setting the first row factor signal to the second value while the first decoded address signal is at the high state.

說(shuō)明書(shū)

As seen in FIG. 6, the gates of transistors 622 and 630 receive the timing control signal R2ACF. When the timing signal R2ACF is high, transistor 622 is OFF to isolate the PH signal line from the high voltage source (e.g., Vccp2) and the transistor 630 is ON to pull down the PH signal line to the value of the low voltage source Vnwl (or, e.g., Vss or another low voltage source) via the stabilization circuit 625. As discussed above, the stabilization circuit 625 can include two continuously gated transistors 626 and 628 that are connected in series. The continuously gated transistors 626 and 628 are connected between the PH signal line and the drains of transistors 630 and 632. Because transistors 626 and 628 are always ON, the voltage PH signal line is pulled down to Vnwl (or, e.g., Vss or another low voltage source) when the transistor 630 or the transistor 632 is ON. The gate of transistor 626 can be connected to a high voltage source that can provide a voltage in a range of 1.5 volts to 4.7 volts (e.g., Vccp2, Vccp, Vcc or another high voltage source) and the gate of transistor 628 is connected to a high voltage source that can provide a voltage in a range of 1.5 volts to 4.7 volts (e.g., Vccp2, Vccp, Vcc or another high voltage source). In some embodiments, the gate of transistor 626 is connected to a voltage source that is at a higher voltage than the gate of transistor 628. For example, the gate of transistor 626 can be connected to Vccp2 and the gate of transistor 628 can be connected to Vccp or Vcc. In some embodiments, the gate of transistor 628 is connected to a voltage source that is at a higher voltage (e.g., Vccp2) than the gate of transistor 626 (e.g., Vccp, Vcc). In some embodiments, the gate of transistor 626 is connected to a voltage source that is at a same voltage level as that of the gate of transistor 628. The NMOS transistors 626 and 628 provide more reliability to FXD 600 circuit by providing a resistive path for the leakage current going through transistor 630 and/or transistor 632 to create a voltage drop in the leakage current path when one or both transistors 630 and 632 are OFF.

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