Single poly multi time program cell and method of operating the same
摘要
說明書
The fourth doping layer 134 may be formed adjacent to the control gate 170 on an upper portion of the second conductivity-type well 110 or the first conductivity-type well 113. In one example, the fourth doping layer 134 may be formed by doping a first conductivity-type impurity, and implemented as a N+ doping layer by injecting a high-concentration ion when forming the fourth doping layer 134.
The first doping layer 131 may be formed on the upper portion of the second conductivity-type well 110. In one example, the first doping layer 131 may be implemented as a P+ doping layer by injecting a high-concentration ion when forming the first doping layer 131, and the energy and the dose amount of the ion injection may be adjusted in order to form the first doping layer 131 at a predetermined depth.
