The single poly MTP cell 100 may read data depending upon the amount of electrons and/or holes injected into or emitted into the floating gate 180. That is, the single poly MTP cell 100 may apply a voltage to the drain electrode 193 and the source electrode 191 of the sensing transistor, and the control gate electrode 171, to read the data programmed in the single poly MTP cell 100 based on the measured current amount.

The control gate electrode 171 may be placed on the upper portion of the fourth doping layer 134 in order to perform the program-erase operation through appropriate transmission through the fourth doping layer 134.

For example, the body electrode 160 may be formed on the upper portion of the first doping layer 131.

In summary, the single poly MTP cell 100 proposed in the examples has the control gate 170 formed on the first conductivity-type well 113 or the first conductivity-type shallow well 140, and the sensing gate 190 formed on the second conductivity-type well 110. In this example, the selection transistor, as used in an alternative MTP cell, does not exist.

As another example, Lightly Doped Drain (LDD) and/or Halo Implant approaches may be added in the entire region or some regions of the single poly MTP cell.

FIGS. 3 and 4 are views illustrating structures of a single poly MTP cell to which LDD and/or Halo Implant are added, in accordance with examples.