As one example, the Halo Implant region discussed further above may be formed by injecting Boron (B) or a Boron compound such as Boron Difluoride (BF₂) having a concentration of 1.0E11 to 1.0E14 atoms/cm³ with an energy of 5?50 KeV, and the LDD implant may be formed by injecting Arsenic (As) or Phosphorous (P) having a concentration of 5.0E13 to 1.0E16 atoms/cm^?3 with an energy of 5?50 KeV, but it is not limited thereto. That is, the Halo Implant region is implemented by a higher concentration ion than the LDD implant used in the standard CMOS process.

In one example, the single poly MTP cell 100 applies a GND voltage to the source electrode 191 and the body electrode 160 for the program operation, and applies the voltage for the program operation itself to the drain electrode 193 and the control gate electrode 171, but operation of the single poly MTP cell 100 is not limited thereto. For example, the single poly MTP cell 100 may apply a voltage lower than the voltage for the program operation to the source electrode 191. In this example, the voltage applied to the control gate electrode 171 may be equal to or greater than the voltage applied to the drain electrode 193 of the sensing transistor. Subsequently, electrons are injected into the floating gate 180 through the first insulating layer 195 due to a high electric field applied to the drain of the sensing transistor and the control gate 170 in the Hot carrier injection method, and stored in the floating gate 180 accordingly. That is, electrons may be injected through the sensing transistor to program data. In this example, the time during which the voltage is applied is very short time period of 1?1000 μs, and the voltage application may be repetitively performed.