In one example, the single poly MTP cell 100 may implement the first type as being an N type, and the second type as a P type, but the single poly MTP cell 100 is not limited thereto. FIGS. 1 to 4 are shown for explaining and presenting one example, and are not intended to limit the scope of the present examples.

FIG. 5 is a plan view illustrating the single poly MTP cell in accordance with an example.

Referring to the example of FIG. 5, the single poly MTP cell 100 may include a first active region 210 and a second active region 220. The first active region 210 may sequentially place a source electrode 191, a sensing gate 190, and a drain electrode 193 to constitute the sensing transistor. Additionally, the second active region 220 may include the control gate 170 and the control gate electrode 171. In one example, the second active region 220 may receive the entire region of the control gate 170 and the control gate electrode 171, in order to enhance operational efficiency of the control gate 170. More specifically, the single poly MTP cell 100 may place the entire region of the control gate 170 within the second active region 220 in order to prevent the unnecessary voltage in the program operation or the erase operation from being delivered to the control gate 170.