FIG. 6 is a circuit view illustrating the single poly MTP cell illustrated in the examples of FIGS. 1 to 4. Referring to the example of FIG. 6, the single poly MTP cell 100 proposed in the examples may be composed of the control gate 170 and a sensing transistor 410, and the selection transistor was removed and is not present. In the example of FIG. 6, the control gate 170 and the sensing gate 190 of the sensing transistor are connected by the floating gate 180. Thus, the program, erase, and read operations may be performed, depending upon the voltage applied to the control gate electrode 171, the source electrode 191, the drain electrode 193, and the body electrode 160.

In one example, the sensing transistor 410 may be implemented by using a tunneling region. That is, the sensing transistor may inject and/or emit electrons or holes in the program operation or erase operation of the data. The single poly MTP cell 100 may form the sensing transistor and the tunneling region in the same physical space to reduce the area of the single poly MTP cell 100.

FIG. 7 is a flowchart illustrating the program and erase operations of the singe poly MTP cell proposed in the examples.

The general floating gate may indicate the value programmed, depending upon whether or not electrons are injected into the floating gate. That is, in the Single Level Cell, if electrons are injected into the floating gate, a logic ‘0’ is denoted, and if electrons are not injected or holes are injected, a logic ‘1’ is denoted instead.