The single poly MTP cell may further include a sensing transistor region in which the drain electrode, the sensing transistor, and the source electrode on the second conductivity-type well are located, and a control gate region in which the control gate and the control gate electrode on the second conductivity-type well or the first conductivity-type well are located.

The single poly MTP cell may further include an isolation film interposed between the sensing transistor region and the control gate region so as to separate the sensing transistor region and the control gate region.

A plurality of pulse voltages repeated during the erase time or the program time for the erase operation and the program operation may be applied to the drain electrode, the source electrode, and the control gate electrode, and the current flowing into the single poly MTP cell between the plurality of repeated pulse voltages may be measured to determine the completion of the erase operation or the program operation.

In another general aspect, a single poly multi time program (MTP) cell includes a second conductivity-type well, a first conductivity-type well located adjacent to the second conductivity-type well, a sensing transistor comprising a drain, a sensing gate, and a source, a drain electrode connected to the drain, a source electrode connected to the source, a control gate connected to the sensing gate, and a control gate electrode, wherein the sensing transistor, the drain electrode, and the source electrode are located on the second conductivity-type well, and wherein the control gate and the control gate electrode are located on the first conductivity-type well.

The sensing gate of the sensing transistor may be implemented by a tunneling region providing a movement path of electrons or holes toward a lower end of the tunneling region.