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Single poly multi time program cell and method of operating the same

專利號(hào)
US10867677B2
公開日期
2020-12-15
申請(qǐng)人
KEY FOUNDRY CO., LTD.(KR Cheongju-si)
發(fā)明人
Su Jin Kim; Myeong Seok Kim; In Chul Jung; Young Bae Kim; Seung Guk Kim; Jung Hwan Lee
IPC分類
G11C11/34; G11C16/04; H01L27/11536; G11C16/14; H01L29/788; H01L27/092; G11C16/26; H01L27/11558; G11C16/10
技術(shù)領(lǐng)域
mtp,erase,gate,electrode,cell,poly,sensing,operation,voltage,in
地域: Cheongju-si

摘要

A single poly multi time program (MTP) cell includes a second conductivity-type well, a sensing transistor comprising a drain, a sensing gate, and a source, a drain electrode connected to the drain, a source electrode connected to the source; a control gate connected to the sensing gate of the sensing transistor, and a control gate electrode, wherein the sensing transistor, the drain electrode, the source electrode, the control gate, and the control gate electrode are located on the second conductivity-type well.

說明書

The applying may include applying a GND voltage to the source electrode, applying a positive voltage (VPP) to the control gate electrode, and applying a positive voltage that is smaller than that of the control gate electrode to the drain electrode.

The repetitively performing may include comparing a number of times that the applying is performed with a fourth setting value, terminating the program by determining as the program failure in response to the number of times being is greater than the fourth setting value as a result of the comparison, and performing the applying, measuring, and determining in response to the number of times being smaller than or equal to the fourth setting value as a result of the comparison.

The measuring may include applying a GND voltage to the source electrode, and applying a low voltage for causing the electrons injected into a floating gate not to exit the floating gate to the drain electrode and the control gate electrode.

The drain electrode may be applied with a first voltage that is greater than a GND voltage, and the control gate electrode is applied with a second voltage that is greater than the first voltage.

Other features and aspects will be apparent from the following detailed description, the drawings, and the claims.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1 and 2 are views illustrating structures of a single poly MTP cell in accordance with examples.

FIGS. 3 and 4 are views illustrating structures of the single poly MTP cell to which LDD and/or Halo Implant are added in accordance with examples.

權(quán)利要求

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