Storage device
地域：
Suwon-si
摘要
A storage device includes a nonvolatile memory device and a controller. A nonvolatile memory device includes a plurality of memory blocks. Each of the plurality of memory blocks is divided into a plurality of zones and is formed on a substrate. Each of the plurality of zones comprises one or more word lines. A controller performs a reliability verification read operation on a first zone of the plurality of zones of a memory block selected from the plurality of memory blocks if a number of read operations performed on the first zone reaches a first threshold value and performs the reliability verification read operation on a second zone of the plurality of zones of the selected memory block if a number of read operations performed on the second zone reaches a second threshold value.
說明書
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This application is a continuation of U.S. patent application Ser. No. 15/493,860 filed Apr. 21, 2017, which claims priority under 35 U.S.C. § 119 to Korean Patent Application No. 10-2016-0080281 filed Jun. 27, 2016, in the Korean Intellectual Property Office, the disclosures of which are incorporated by reference herein in their entireties.
The present inventive concept relates to a storage device.
Semiconductor memory devices refer to memory devices that are implemented using semiconductors such as silicon (Si), germanium (Ge), gallium arsenide (GaAs), indium phosphide (InP), or the like. Semiconductor memory devices are classified into volatile memory devices and nonvolatile memory devices.
The volatile memory devices lose data stored therein at power-off. The volatile memory devices includes a static random access memory (SRAM), a dynamic ram (DRAM), a synchronous DRAM, and the like. The nonvolatile memory devices retain data stored therein even at power-off. The nonvolatile memory devices include a read only memory (ROM), a programmable ROM (PROM), an electrically programmable ROM (EPROM), an electrically erasable and programmable ROM (EEPROM), a flash memory device, a phase-change RAM (PRAM), a magnetic RAM (MRAM), a resistive RAM (RRAM), a ferroelectric RAM (FRAM), and the like.
權(quán)利要求
What is claimed is:1. A storage device comprising:a nonvolatile memory device comprising a plurality of memory blocks, each of the plurality of memory blocks being divided into a plurality of zones and the plurality of zones corresponding to different a plurality of read, threshold values, respectively; and a controller configured to perform a reliability verification read operation on a first zone of the plurality of zones of a memory block selected from the plurality of memory blocks if a number of read operations performed on the first zone reaches a first read threshold value. 2. The storage device of claim 1 , wherein the controller is further configured to:detect an error of data read from the first zone through the reliability verification read operation on the first zone, and perform a read reclaim operation on data stored in the first zone based on the detected error. 3. The storage device of claim 2 , wherein the read reclaim operation on the data stored in the first zone is performed if a number of error bits of the data read from the first zone exceeds a reference number. 4. The storage device of claim 2 , wherein the read reclaim operation is performed by moving the data stored in the first zone of the selected memory block to another memory block of the plurality of memory blocks. 5. The storage device of claim 1 , wherein each of the plurality of zones corresponds to one or more word lines;wherein the nonvolatile memory device is configured to read data from memory cells connected to one or more word lines corresponding to the first zone in the reliability verification read operation. 6. The storage device of claim 1 , herein the controller is further configured to classify the selected memory block into a plurality of new, zones based on a number of program/erase cycles of the selected memory block. 7. The storage device of claim 6 , wherein the controller is further configured to set new first read threshold value to perform the reliability verification read operation on a first new zone of the plurality of new zones,wherein the new first read threshold value is different from the first read threshold value. 8. The storage device of claim 1 , wherein memory cells of the selected memory block are connected to a plurality of word lines vertically stacked on a substrate. 9. The storage device of claim 8 , wherein a first word line connected to at least one memory cell of the first zone is the bottom word line of the plurality of word lines from the substrate and a second word line is the top word line of the plurality of word lines from the substrate. 10. The storage device of claim 9 , wherein a number of the reliability verification read operation on the at least one memory cell connected to the first word line is more than a number of the reliability verification read operation on at least one memory cell connected to the second word line. 11. A storage device comprising:a nonvolatile memory device including a plurality of word lines vertically stacked on a substrate, a first word line of the plurality of word lines being connected to at least one memory cell of a first zone corresponding to a first read threshold value and a second word line of the plurality of word lines being connected to at least one memory cell of a second zone corresponding to a second read threshold value which is different from the first read threshold value; and a controller configured to perform a reliability verification read operation on the at least one memory cell connected to the first, word line if a number of read operations performed on the first zone reaches the first read threshold value. 12. The storage device of claim 11 , wherein the nonvolatile memory device includes a memory block and the memory block includes the first zone and the second zone. 13. The storage device of claim 12 , wherein the controller is further configured to:detect an error of data read from the at least one memory cell connected to the first word line through the reliability verification read operation, and perform a read reclaim operation on data stored in the memory block based on the detected error. 14. The storage device of claim 13 , wherein the read reclaim operation is performed by moving the data stored in the memory block to another memory block included in the nonvolatile memory device. 15. The storage device of claim 12 , wherein the controller is further configured to classify the memory block into a plurality of new zones based on a number of program/erase cycles of the memory block. 16. The storage device of claim 11 , wherein the controller further configured to perform the reliability verification read operation on the at least one memory cell connected to the second word line if a number of read operations performed on the second zone reaches the second read threshold value. 17. The storage device of claim 16 , wherein the first word line is closer to the substrate than the second word line. 18. The storage device of claim 17 , wherein a number of the reliability verification read operation on the at least one memory cell connected to the first word line is more than a number of the reliability verification read operation on the at least one memory cell connected to the second word line. 19. The storage device of claim 17 , wherein the first read threshold value is less than the second read threshold value. 20. The storage device of claim 11 , wherein the controller is, further configured to store the first threshold value corresponding to the first zone and the second threshold value corresponding to the second zone.
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