Storage device
摘要
說明書
If the number of error bits of the data read from the memory cells of the first word line WL1 exceeds the reference number of error bits, the ECC circuit 122 may provide error bit information BE1 to the reclaim management unit 123. For example, the error bit information BE1 may include information about the number of error bits of the read data. The reclaim management unit 123 may perform a read reclaim operation on the first word line WL1. However, the present inventive concept is not limited thereto. The reclaim management unit 123 may perform the read reclaim operation on the first and second word lines WL1 and WL2. In this case, the read reclaim operation may be performed on the word lines WL1 and WL2 in the same zone of Zone_1a. In an exemplary embodiment, the reclaim management unit 123 may perform a read reclaim operation on the first to eighth word lines WL1 to WL8. In this case, the read reclaim operation may be performed on all the word lines WL1 to WL8 in the selected block BLKz.
