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Storage device

專利號
US10867683B2
公開日期
2020-12-15
申請人
SAMSUNG ELECTRONICS CO., LTD.（KR Suwon-si）
發(fā)明人
Young-Seop Shim; Jaehong Kim
IPC分類
G11C16/26; G11C16/34; G06F11/10; G11C16/04
技術(shù)領(lǐng)域
memory,read,word,may,reclaim,zone,blkz,zones,wl1,count
地域： Suwon-si

摘要

A storage device includes a nonvolatile memory device and a controller. A nonvolatile memory device includes a plurality of memory blocks. Each of the plurality of memory blocks is divided into a plurality of zones and is formed on a substrate. Each of the plurality of zones comprises one or more word lines. A controller performs a reliability verification read operation on a first zone of the plurality of zones of a memory block selected from the plurality of memory blocks if a number of read operations performed on the first zone reaches a first threshold value and performs the reliability verification read operation on a second zone of the plurality of zones of the selected memory block if a number of read operations performed on the second zone reaches a second threshold value.

說明書

FIG. 8 is a flowchart illustrating a read reclaim method of a storage device of FIG. 1. Referring to FIGS. 1 and 4 to 7, in operation S210, the controller 210 may detect an error bit(s) from read data. For example, the controller 120 may read data from the nonvolatile memory device 110 through the reliability verification read operation and may detect an error bit(s) of the read data.

In operation S220, the controller 120 may compare the number of error bits of the read data with the reference number of error bits. For example, if the number of error bits of the read data is less than the reference number of error bits, the read reclaim operation need not be performed. If the number of error bits of the read data exceeds the reference number of error bits, in operation S230, the controller 120 performs the read reclaim operation. If the number of error bits of the read data exceeds the reference number of error bits, the read data is determined as uncorrectable by the ECC circuit 122.

權(quán)利要求

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