A method of manufacturing a capacitor according to an exemplary embodiment in the present disclosure may include an operation (S110) of preparing a structure including a plurality of openings penetrating from a first surface of the structure to a second surface opposing the first surface, an operation (S120) of forming a first connection layer on the first surface of the structure, an operation (S130) of forming a capacitor layer disposed on the second surface of the structure and the plurality of openings and including a dielectric layer, and a first electrode and a second electrode disposed while having the dielectric layer interposed therebetween, an operation (S140) of forming a second connection layer disposed on the second surface of the substrate and connected to the second electrode, and an operation (S150) of forming first and second terminals connected to the first connection layer and the second connection layer, respectively.

Hereinafter, the respective operations will be described with reference to FIGS. 7 through 14.