Next, as illustrated in FIG. 9, a first electrode 121, a dielectric layer 123, and a second electrode 122 may be deposited on a second surface of the structure 110 (an upper surface of the structure in FIG. 8 and FIG. 9) and in the plurality of the openings in order through an atomic layer deposition (ALD) process or an atomic vapor deposition (AVD) process. The first electrode 121 and the second electrode 122 may be formed of TiN, and the dielectric layer 123 may be formed of any one or combination of metal oxides such as Al₂O₃, ZrO₂, and HfO₂, or ZAZ which is a ZrO₂—Al₂O₃—ZrO₂ composite layer. A filling part 131 may be disposed on the capacitor layer 120 within the opening of the structure 110. That is, the filling part 131 may fill a remaining space after the capacitor layer 120 is disposed in the opening of the structure 110. The filling part 131 may be a conductor such as tungsten (W) or polycrystalline silicon, but is not limited thereto. In the case in which the filling part 131 is tungsten (W), the first filling part 131 may be manufactured by a sputtering process using tungsten (W).

Next, as illustrated in FIG. 10, the capacitor layer 120 formed on a region E of the second surface of the structure 110 may be removed by an etching process such as photo-dry etching (PDE).