The first electrode 121 and the second electrode 122 are disposed to face each other while having the dielectric layer 123 interposed therebetween, such that the first electrode 121 and the second electrode 122 may operate as a capacitor when voltages of different polarities are applied thereto. That is, the first electrode 121 and the second electrode 122 are disposed while having the first dielectric layer 123 interposed therebetween, such that the capacitor layer 120 may have a metal-insulator-metal (MIM) structure.

In the case in which the capacitor layer 120 is disposed in the opening of the structure 110, a space may be formed in an upper portion of the center of the opening. Such a space may cause a crack in the structure 110 or the capacitor layer 120. Therefore, a filling part 131 may be disposed on the capacitor layer 120 within the opening of the structure 110. That is, the filling part 131 may fill a remaining space after the capacitor layer 120 is disposed in the opening of the structure 110.

The filling part 131 may be a conductor such as tungsten (W) or polycrystalline silicon, but is not limited thereto. In the case in which the filling part 131 is the conductor, resistance between an electrode and a connection layer, adjacent to the filling part 131, may be significantly reduced. In the case in which the filling part 131 is tungsten (W), the filling part 131 may not require a high temperature heat treatment unlike polycrystalline silicon. For example, the first filling part 131 may be manufactured by a sputtering process using tungsten (W).