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Capacitor and method of manufacturing the same

專利號
US10867752B2
公開日期
2020-12-15
申請人
SAMSUNG ELECTRO-MECHANICS CO., LTD.(KR Suwon-si)
發(fā)明人
Hyun Ho Shin; Jeong Hoon Ryou; Dong Sik Yoo; No Il Park; Chang Soo Jang; Young Kyu Park
IPC分類
H01G4/33; H01G4/232; H01G4/248; H01G4/012; H01G4/30; H01G4/12; H01L49/02; H01G4/08
技術(shù)領(lǐng)域
capacitor,layer,electrode,may,structure,first,second,surface,be,in
地域: Suwon-Si

摘要

A capacitor includes a structure including a plurality of openings penetrating from a first surface of the structure to a second surface opposing the first surface; a capacitor layer disposed on the second surface of the structure and in the plurality of the openings and including a dielectric layer, and a first electrode and a second electrode, the dielectric layer interposed between the first electrode and the second electrode; a first connection layer disposed on the first surface of the structure and connected to the first electrode; a second connection layer disposed on the capacitor layer on the second surface and connected to the second electrode of the structure; and first and second terminals disposed on opposite side surfaces of the structure and connected to the first connection layer and the second connection layer, respectively.

說明書

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17

The first connection layer 140 may be disposed on a first surface (a lower surface in FIG. 3) of the structure 110. The first connection layer 140 is not disposed on the entirety of the first surface of the structure 110, but may be disposed on a region other than a first region of the first surface of the structure 110 (a right region of lower surface of 110 in FIG. 3). That is, the first connection layer 140 may be disposed on the first surface other than a partial region in contact with a second side surface on which the second terminal 170 is disposed. The first electrode 121 of the capacitor layer 120 may be exposed to a lower portion of the opening of the structure 110, and the first connection layer 140 may be connected to the first electrode 121.

Here, a metal layer 145 may be disposed between the first connection layer 140 and the first electrode 121. The metal layer 145 may be formed by forming the first connection layer 140 and then performing an electroplating process in which the first connection layer 140 is used as a seed layer. When the first electrode 121 is deposited on an inner side of the opening, the first electrode 121 may also be deposited on the metal layer 145.

權(quán)利要求

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