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Physical vapor deposition in-chamber electro-magnet

專利號
US10867776B2
公開日期
2020-12-15
申請人
Applied Materials, Inc.(US CA Santa Clara)
發(fā)明人
Brian T. West; Michael S. Cox; Miroslav Gelo; Dinkesh Huderi Somanna
IPC分類
H01J37/32; H01J37/34; C23C14/56; H01L21/285; C23C14/04
技術(shù)領(lǐng)域
pvd,coil,chamber,dc,in,portion,deposition,power,substrate,sputtering
地域: CA CA Santa Clara

摘要

A PVD chamber deposits a film with high thickness uniformity. The PVD chamber includes a coil of an electromagnetic that, when energized with direct current power, can modify plasma in an edge portion of the processing region of the PVD chamber. The coil is disposed within the vacuum-containing portion of the PVD chamber and outside a processing region of the PVD chamber.

說明書

Coil portion 130 is a coil of an electromagnet that is disposed within PVD chamber 100 and outside of processing region 105. According to various embodiments, during a PVD process in PVD chamber 100, direct current (DC) power is applied to coil portion 130 to generate a magnetic field (not shown) that extends into processing region 105. As a result, the distribution and density of plasma in processing region 105 can be altered, thereby modifying the rate of deposition onto the surface of substrate 101. Specifically, because the magnetic field generated by coil portion 130 is most intense near the periphery of processing region 105 and of substrate 101, the biggest changes to deposition rate caused by the magnetic field occur near the circumference of substrate 101. Thus, center-to-edge uniformity issues of a film deposited on substrate 101 can be addressed by altering the intensity of the magnetic field generated by coil portion 130 by changing the current flowing therethrough.

權(quán)利要求

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