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Selective removal of an etching stop layer for improving overlay shift tolerance

專利號(hào)
US10867805B2
公開日期
2020-12-15
申請人
Taiwan Semiconductor Manufacturing Co., Ltd.(TW Hsinchu)
發(fā)明人
Chien-Hua Huang; Tzu-Hui Wei; Cherng-Shiaw Tsai
IPC分類
H01L21/311; H01L21/768; H01L23/528; H01L23/522; H01L21/033; H01L21/8234; H01L21/02; H01L23/532; H01L21/321
技術(shù)領(lǐng)域
esl,ild,conductive,silicon,oxide,etching,in,etch,metal,portion
地域: Hsin-Chu

摘要

An example embodiment of the present disclosure involves a method for semiconductor device fabrication. The method comprises providing a structure that includes a conductive component and an interlayer dielectric (ILD) that includes silicon and surrounds the conductive component, and forming, over the conductive component and the ILD, an etch stop layer (ESL) that includes metal oxide. The ESL includes a first portion in contact with the conductive component and a second portion in contact with the ILD. The method further comprises baking the ESL to transform the metal oxide located in the second portion of the ESL into metal silicon oxide, and selectively etching the ESL so as to remove the first portion of the ESL but not the second portion of the ESL.

說明書

The present disclosure is generally directed to, but not otherwise limited to, reducing or preventing problems associated with overlay control. Overlay may refer to the alignment between various components of different layers in a semiconductor device such as an integrated circuit (IC) chip. For example, an IC chip may include an interconnect structure that is made up of multiple interconnect layers (also called different metallization layers). Each interconnect layer may include one or more conductive components—such as vias, contacts, or metal lines—that are surrounded by an interlayer dielectric (ILD). In some instances, a first conductive component in one interconnect layer (e.g., an upper layer) may need to be electrically connected to a second conductive component in another interconnect layer (e.g., a lower layer). Thus it is desirable for these two conductive components to be aligned vertically. If overlay control is unsatisfactory, there may be a significant amount of misalignment between the two conductive components, which could lead to problems such as over-etching of the ILD next to the second conductive component (a tiger tooth like pattern). The over-etching may shorten a current leakage pathway to neighboring conductive components, which may in turn cause reliability and/or performance problems such as time-dependent dielectric breakdown (TDDB) or other current leakage issues.

權(quán)利要求

1
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